mosfet 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 1gate 2 source 3 drain 2SK1828 features 2.5v gate drive low threshold voltage :v th =0.5 to 1.5v high speed absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 20 v gate to source voltage v gss 10 v drain current i d 50 ma power dissipation p d 200 m w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10ms, duty cycle 5% electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain source breakdown voltage v dss i d =100 a,v gs =0 20 v drain cut-off current i dss v ds =20v,v gs =0 1.0 a gate leakage current i gss v gs =10v,v ds =0 1 a forward transfer admittance y fs v ds =3.0v,i d =10ma 20 ms drain to source on-state resistance r ds(on) v gs =2.5v,i d =10ma 25 40 input capacitance c iss 5.5 pf output capacitance c oss 1.6 pf reverse transfer capacitance c rss 6.5 pf switching time turn on time ton 0.14 s switching time turn off time toff 0.14 s v ds =3.0v,v gs =0,f=1mhz i d =10ma,v gs(on) =0 to 2.5v,v dd =3.0v marking marking ki 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com mosfet smd type smd type product specification
|
